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Communication Dans Un Congrès Année : 2023

Plasma etching of high aspect ratio GaN and AlN nanopillars for the next generation of ultraviolet light-emitting diodes

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hal-04512539 , version 1 (20-03-2024)

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  • HAL Id : hal-04512539 , version 1

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L. Jaloustre, S. Sales De Mello, S. Labau, C. Petit-Etienne, E. Pargon. Plasma etching of high aspect ratio GaN and AlN nanopillars for the next generation of ultraviolet light-emitting diodes. 44rd International Symposium on dry process DPS 2023, Nov 2023, NAGOYA, Japan. ⟨hal-04512539⟩
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