Plasma etching of high aspect ratio GaN and AlN nanopillar arrays for next generation of ultraviolet lightemitting diodes fabrication - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Plasma etching of high aspect ratio GaN and AlN nanopillar arrays for next generation of ultraviolet lightemitting diodes fabrication

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hal-04511479 , version 1 (19-03-2024)

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  • HAL Id : hal-04511479 , version 1

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L. Jaloustre, S. R. Sales De Mello, S. Labau, C. Petit-Etienne, E. Pargon. Plasma etching of high aspect ratio GaN and AlN nanopillar arrays for next generation of ultraviolet lightemitting diodes fabrication. 13th Plasma Etch and Strip in Microtechnologies workshop (PESM), Jun 2023, Grenoble, France. ⟨hal-04511479⟩
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