Study of the impact of the aspect ratio of etched silicon wafers on the ion angular distribution and ion energy distribution in pulsed plasma etching - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Study of the impact of the aspect ratio of etched silicon wafers on the ion angular distribution and ion energy distribution in pulsed plasma etching

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hal-04511461 , version 1 (19-03-2024)

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  • HAL Id : hal-04511461 , version 1

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Rochdi N., Cunge G., Kogelschatz M., Petit-Etienne C.. Study of the impact of the aspect ratio of etched silicon wafers on the ion angular distribution and ion energy distribution in pulsed plasma etching. 13th Plasma Etch and Strip in Microtechnologies workshop (PESM), Jun 2023, Grenoble, France. ⟨hal-04511461⟩
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