Silicon-integrated La2NiO4+δ-Based Valencechange Memristive Devices with Neuromorphic Programming Capabilities - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Silicon-integrated La2NiO4+δ-Based Valencechange Memristive Devices with Neuromorphic Programming Capabilities

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Dates et versions

hal-03780501 , version 1 (19-09-2022)

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  • HAL Id : hal-03780501 , version 1

Citer

T-K. Khuu, G. Lefèvre, C. Jiménez, S. Blonkowski, E. Jalaguier, et al.. Silicon-integrated La2NiO4+δ-Based Valencechange Memristive Devices with Neuromorphic Programming Capabilities. CIMTEC 2022, Jun 2022, Perugia, Italy. ⟨hal-03780501⟩
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