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Article Dans Une Revue Nanotechnology Année : 2019

Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices

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hal-02183996 , version 1 (15-07-2019)

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F. Morisot, V. Nguyen, C. Montémont, T Maindron, David Munoz-Rojas, et al.. Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices. Nanotechnology, 2019, 30 (38), pp.385202. ⟨10.1088/1361-6528/ab2aa5⟩. ⟨hal-02183996⟩
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