Electrical Properties of GaAs, InAs, InGaAs Epitaxially Grown on 300 mm Si(001) Substrate by MOCVD - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Electrical Properties of GaAs, InAs, InGaAs Epitaxially Grown on 300 mm Si(001) Substrate by MOCVD

Fichier non déposé

Dates et versions

hal-01929226 , version 1 (21-11-2018)

Identifiants

  • HAL Id : hal-01929226 , version 1

Citer

Reynald Alcotte, Mickaël Martin, Tiphaine Cerba, Jeremy Moeyaert, Fares Chouchane, et al.. Electrical Properties of GaAs, InAs, InGaAs Epitaxially Grown on 300 mm Si(001) Substrate by MOCVD. 2017 MRS Spring Meeting:Symposium ED3: Electronic Device and Materials: Physics, Chemistry and Materials for Beyond silicon Electronics, session III-V Growth and Interfaces, Apr 2017, Phoenix, United States. ⟨hal-01929226⟩
81 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More