Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2021

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs

Résumé

Gate-to-channel coupling capacitance behavior on GaN-HEMT with recessed MIS-gate was analyzed combining experimental data and 2D-simulations. A new protocol to discriminate the contribution of the active channel and of the different coupling parasitic capacitances on a C-V curve of a GaN MIS-HEMT is proposed. It also enables the evaluation of the respective contributions of all parasitic components such as passivation layer and gate field plate capacitances in the parasitic capacitance of GaN HEMT devices.
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Dates et versions

hal-04745735 , version 1 (21-10-2024)

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Citer

R. Kom Kammeugne, C. Leroux, T. Mota Frutuoso, J. Cluzel, L. Vauche, et al.. Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Sep 2021, Grenoble, France. pp.299-302, ⟨10.1109/ESSDERC53440.2021.9631820⟩. ⟨hal-04745735⟩
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