Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based µLEDs
Résumé
Abstract The mass production of µLEDs requires an upscaling approach on 200 mm wafers, which implies the deployment of a technology that achieves zero defectivity without liftoff. In this report, Nanoimprint lithography (NIL) processing is successfully optimized for nanostructuring GaN‐based Silicon‐On‐Insulator (SOI) substrates. The etching of SiO 2 /GaN/AlN/Si/SiO 2 layers using different plasmas is conducted and multi‐layer nanopillars 100–200 mm in diameter are fabricated. This approach generates zero‐defect arrays of pillars, which is particularly advantageous for the growth process. In addition, the SiO 2 at the bottom of the pillar allows it to twist during the subsequent GaN regrowth, as this layer becomes soft at the growth temperature >1000 °C. This ability to deform enables a coalescence of pillars into layers with reduced dislocation density. As a result, high‐quality GaN microplatelets and µLEDs are grown via a bottom‐up approach based on pendeoepitaxy using metal–organic vapor phase epitaxy (MOVPE). The fabricated µLEDs have a very smooth surface with a roughness of 0.6 nm which facilitated the implementation of an easy and simple transfer protocol. Adhesive tape and metalmetal bonding, are used to bond the µLEDs onto a metal‐coated silicon substrate. The reported findings offer exciting new insights into the development of high‐performance displays.
Domaines
Physique [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
|---|