Plasma etching of high aspect ratio GaN and AlN nanopillar arrays for next generation of ultraviolet light-emitting diodes fabrication - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Plasma etching of high aspect ratio GaN and AlN nanopillar arrays for next generation of ultraviolet light-emitting diodes fabrication

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hal-04512562 , version 1 (20-03-2024)

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  • HAL Id : hal-04512562 , version 1

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Lucas Jaloustre, Saron-Rosy Sales de Mello, Sébastien Labau, Camille Petit-Etienne, Erwine Pargon. Plasma etching of high aspect ratio GaN and AlN nanopillar arrays for next generation of ultraviolet light-emitting diodes fabrication. Plasma Etch and Strip in Microelectronics (PESM), 13th International Workshop, Jun 2023, GRENOBLE, France. ⟨hal-04512562⟩
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