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Communication Dans Un Congrès Année : 2023

Cathodoluminescence characterization of the plasma induced damage during the patterning of high aspect ratio GaN nanowires

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hal-04511473 , version 1 (19-03-2024)

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  • HAL Id : hal-04511473 , version 1

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S. R. Sales De Mello, L. Jaloustre, S. Labau, C. Petit-Etienne, G. Jacopin, et al.. Cathodoluminescence characterization of the plasma induced damage during the patterning of high aspect ratio GaN nanowires. 13th Plasma Etch and Strip in Microtechnologies workshop (PESM), Jun 2023, Grenoble, France. ⟨hal-04511473⟩
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