Cathodoluminescence characterization of the plasma induced damage during the patterning of high aspect ratio GaN nanowires - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2023

Cathodoluminescence characterization of the plasma induced damage during the patterning of high aspect ratio GaN nanowires

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Physique [physics]

Marielle Clot  : Connectez-vous pour contacter le contributeur

https://hal.univ-grenoble-alpes.fr/hal-04511473

Soumis le : mardi 19 mars 2024-15:55:41

Dernière modification le : mardi 28 mai 2024-11:01:17

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hal-04511473 , version 1 (19-03-2024)

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  • HAL Id : hal-04511473 , version 1

Citer

S. R. Sales De Mello, L. Jaloustre, S. Labau, C. Petit-Etienne, G. Jacopin, et al.. Cathodoluminescence characterization of the plasma induced damage during the patterning of high aspect ratio GaN nanowires. 13th Plasma Etch and Strip in Microtechnologies workshop (PESM), Jun 2023, Grenoble, France. ⟨hal-04511473⟩

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