Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission
Résumé
Metal organic chemical vapor deposition of AlGaAs on GaAs on nominal 300 mm (001) Si was studied using selective epitaxial growth. Growth and structural characterization of AlGaAs layers formed on GaAs structures is presented. AlGaAs layers with dierent chemical compositions were fabricated on top of GaAs faceted structures. Energy Dispersive X-ray spectra were investigated to characterize the structure. It was found that the selective growth of AlGaAs structures for red optical emission needs careful temperature tuning. Indeed, AlGaAs layers show steep compositional variations depending on the crystallographic planes they are grown upon. Cathodoluminescence revealed that quantum well emission is best for the simpler rectangular shaped underlying GaAs structure. Thus, the obtained layers show that they could be excellent candidates for future red optical emitters directly integrated on a silicon wafer platform
Domaines
Physique [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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