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Article Dans Une Revue Crystal Growth & Design Année : 2022

Short-range mechanisms in the creation of a ZnO/InGaAs interface

Résumé

We perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transition from an amorphous structure to a nanocrystalline one. The former retains much of the characteristics of a ZnO crystal in the Zn coordination shell, while the latter shows atomic ordering up to at least the third neighbor shell of Zn atoms, despite the absence of Bragg X-ray diffraction peaks. We show that the different chemical preparation of the substrate surface affects the ZnO local structure and that, counterintuitively, a stronger short-range order is obtained in the nanostructures characterized by lower local order at the interface. We propose a model that accounts for these findings.
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Dates et versions

hal-03776959 , version 1 (14-09-2022)

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Gianluca Ciatto, Evgeniy Skopin, Marie-Ingrid Richard, Dillon Fong, Hubert Renevier. Short-range mechanisms in the creation of a ZnO/InGaAs interface. Crystal Growth & Design, 2022, 22 (8), pp.4768-4776. ⟨10.1021/acs.cgd.2c00137⟩. ⟨hal-03776959⟩
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