Chemically Selective Deposition of TiN by Ion-Assistance during Plasma Enhanced Atomic Layer Deposition - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2020
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hal-03449538 , version 1 (25-11-2021)

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  • HAL Id : hal-03449538 , version 1

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Jaffal Moustapha, Taguhi Yeghoyan, Samia Belahcen, Vincent Pesce, Marceline Bonvalot, et al.. Chemically Selective Deposition of TiN by Ion-Assistance during Plasma Enhanced Atomic Layer Deposition. 29th Materials for Advanced Metallization 2020, 2020, conference virtuelle, France. ⟨hal-03449538⟩
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