Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance

Bernard Diény; M. Mansueto; A. Chavent; S. Auffret; I. Joumard; L. Vila; R. C Sousa; L. D Buda-Prejbeanu; I. L Prejbeanu

doi:10.1039/D1NR00346A

Journal Articles Nanoscale Year : 2021

Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance

(1) , , , , , , , ,

Bernard Diény

Function : Author
PersonId : 183637
IdHAL : bernard-dieny
ORCID : 0000-0002-0575-5301
IdRef : 091501474

SPINtronique et TEchnologie des Composants

M. Mansueto

Function : Author
PersonId : 776613
ORCID : 0000-0003-1181-6235

A. Chavent

Function : Author

S. Auffret

Function : Author

I. Joumard

Function : Author

L. Vila

Function : Author

R. C Sousa

Function : Author

L. D Buda-Prejbeanu

Function : Author
PersonId : 184751
IdHAL : liliana-d-buda-prejbeanu
ORCID : 0000-0002-6105-151X
IdRef : 137932510

I. L Prejbeanu

Function : Author

Abstract

In this study, a new type of compact magnetic memristor is demonstrated.

Keywords

Magnetic tunnel junction tunnel margnetoresistance memristor exchange bias neuromorphic dry friction

Domains

Materials Science [cond-mat.mtrl-sci]

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Revised article Nanoscale - 2nd revision-changes accepted.pdf (1.27 Mo)

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Bernard Dieny : Connect in order to contact the contributor

https://hal.univ-grenoble-alpes.fr/hal-03360800

Submitted on : Friday, October 1, 2021-8:54:29 AM

Last modification on : Friday, March 24, 2023-2:53:23 PM

Long-term archiving on: Sunday, January 2, 2022-6:22:32 PM

Dates and versions

hal-03360800 , version 1 (01-10-2021)

Identifiers

HAL Id : hal-03360800 , version 1
DOI : 10.1039/D1NR00346A

Cite

Bernard Diény, M. Mansueto, A. Chavent, S. Auffret, I. Joumard, et al.. Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance. Nanoscale, 2021, 13 (26), pp.11488-11496. ⟨10.1039/D1NR00346A⟩. ⟨hal-03360800⟩

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Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance

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