Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches - Université Grenoble Alpes
Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2021

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

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hal-03180749 , version 1 (25-03-2021)

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Moustapha Jaffal, Taguhi Yeghoyan, Gauthier Lefèvre, Rémy Gassilloud, Nicolas Possémé, et al.. Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches. Journal of Vacuum Science & Technology A, 2021, 39 (3), pp.030402. ⟨10.1116/6.0000969⟩. ⟨hal-03180749⟩
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