Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches - Université Grenoble Alpes Accéder directement au contenu
Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2021

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Fichier non déposé

Dates et versions

hal-03180749 , version 1 (25-03-2021)

Identifiants

Citer

Moustapha Jaffal, Taguhi Yeghoyan, Gauthier Lefèvre, Rémy Gassilloud, Nicolas Possémé, et al.. Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches. Journal of Vacuum Science & Technology A, 2021, 39 (3), pp.030402. ⟨10.1116/6.0000969⟩. ⟨hal-03180749⟩
51 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More