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Communication Dans Un Congrès Année : 2020

A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications

Résumé

This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double-Shunt topology, respectively. In the 140 to 195 GHz frequency range, the Double-Shunt Transfer Switch shows an isolation between 27 and 46 dB, and an insertion loss between 5 and 7 dB. Compared to the Single-Shunt Transfer Switch, the double shunt switch presents a much better isolation while having a quite comparable insertion loss and area overhead. To the best of our knowledge, the proposed switches are the first fully integrated transfer switches in BiCMOS or CMOS technologies.
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Dates et versions

hal-02934668 , version 1 (09-09-2020)

Identifiants

Citer

Walid Aouimeur, Marc Margalef-Rovira, Estelle Lauga-Larroze, Daniel Gloria, Christophe Gaquière, et al.. A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications. IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020, Nov 2020, Linz, Austria. 4 p., ⟨10.1109/ICMIM48759.2020.9299098⟩. ⟨hal-02934668⟩
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