Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms - Université Grenoble Alpes Accéder directement au contenu
Article Dans Une Revue Journal of Materials Science: Materials in Electronics Année : 2020

Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

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hal-02916808 , version 1 (18-08-2020)

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M. Saadi, P. Gonon, C. Vallee, F. Jomni, E. Jalaguier, et al.. Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms. Journal of Materials Science: Materials in Electronics, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩. ⟨hal-02916808⟩
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