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Article Dans Une Revue MRS Online Proceedings Library Année : 2003

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm

Résumé

ABSTRACT Self-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.
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Dates et versions

hal-02353320 , version 1 (16-04-2024)

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Vincent Célibert, Bassem Salem, Gérard Guillot, Catherine Bru-Chevallier, Laurent Grenouillet, et al.. Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm. MRS Online Proceedings Library, 2003, Materials Research Society Symposium - Proceedings, 794, pp. 207-212. ⟨10.1557/PROC-799-Z7.8/T7.8⟩. ⟨hal-02353320⟩
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