Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots - Université Grenoble Alpes
Article Dans Une Revue Materials Science and Engineering: C Année : 2006

Dates et versions

hal-02353058 , version 1 (07-11-2019)

Identifiants

Citer

B. Ilahi, L. Sfaxi, F. Hassen, B. Salem, G. Bremond, et al.. Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots. Materials Science and Engineering: C, 2006, 26 (2-3), pp.374-377. ⟨10.1016/j.msec.2005.10.034⟩. ⟨hal-02353058⟩
25 Consultations
0 Téléchargements

Altmetric

Partager

More