Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films - Université Grenoble Alpes
Article Dans Une Revue Journal of Applied Physics Année : 2007

Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films

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hal-02352877 , version 1 (07-11-2019)

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P. Noe, B. Salem, E. Delamadeleine, D. Jalabert, V. Calvo, et al.. Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films. Journal of Applied Physics, 2007, 102 (10), pp.103516. ⟨10.1063/1.2817512⟩. ⟨hal-02352877⟩
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