High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2019

High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

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hal-02330625 , version 1 (24-10-2019)

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Claire Besancon, Jean Decobert, Jean-Pierre Le Goec, Nicolas Vaissière, Cecilia Dupre, et al.. High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate. 2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8818994⟩. ⟨hal-02330625⟩
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