Development and optimization of the Smart Etch concept for SiN spacer etching with high selectivity over Si and SiO2 - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2019
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hal-02324928 , version 1 (22-10-2019)

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  • HAL Id : hal-02324928 , version 1

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V. Renaud, C. Petit-Etienne, J. P. Barnes, L. Vallier, G. Cunge, et al.. Development and optimization of the Smart Etch concept for SiN spacer etching with high selectivity over Si and SiO2. Plasma Etch and Strip in Microelectronics (PESM), 11th International Workshop, May 2019, Grenoble, France. ⟨hal-02324928⟩
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