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Communication Dans Un Congrès Année : 2019

Plasma etching processes for the fabrication of a low-loss SiN micro-resonator and low power threshold of parametric oscillations

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hal-02324790 , version 1 (22-10-2019)

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  • HAL Id : hal-02324790 , version 1

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L. Youssef, E. Pargon, C. Petit-Etienne, H. El Dirani, C. Sciancalepore. Plasma etching processes for the fabrication of a low-loss SiN micro-resonator and low power threshold of parametric oscillations. Plasma Etch and Strip in Microelectronics (PESM), 11th International Workshop, May 2019, Grenoble, France. ⟨hal-02324790⟩
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