Ultralow-loss tightly confining Si 3 N 4 waveguides and high-Q microresonators - Université Grenoble Alpes
Article Dans Une Revue Optics Express Année : 2019

Ultralow-loss tightly confining Si 3 N 4 waveguides and high-Q microresonators

Résumé

Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼10 7 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si 3 N 4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
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Dates et versions

hal-02324671 , version 1 (06-11-2020)

Identifiants

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Houssein El Dirani, Laurène Youssef, Camille Petit-Etienne, Sebastien Kerdiles, Philippe Grosse, et al.. Ultralow-loss tightly confining Si 3 N 4 waveguides and high-Q microresonators. Optics Express, 2019, 27 (21), pp.30726. ⟨10.1364/OE.27.030726⟩. ⟨hal-02324671⟩
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