Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping - Université Grenoble Alpes
Article Dans Une Revue Materials Année : 2019

Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

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Matériaux

Dates et versions

hal-02183969 , version 1 (15-07-2019)

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Getnet Kacha Deyu, Jonas Hunka, Hervé Roussel, Joachim Brötz, Daniel Bellet, et al.. Electrical Properties of Low-Temperature Processed Sn-Doped In2O3 Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping. Materials, 2019, 12 (14), pp.2232. ⟨10.3390/ma12142232⟩. ⟨hal-02183969⟩
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