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Communication dans un congrès

Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells

Abstract : Monolithic two-terminal III-V on Si dual-junction (2J) solar cells were fabricated by means of Surface-Activated direct wafer Bonding (SAB). Al 0.2 Ga 0.8 As single-junction cells are grown on GaAs substrate by Metal-Organic Vapor Phase Epitaxy (MOVPE) and bonded at room temperature to independently fabricated Si solar cells. The n+-GaAs//n+-Si bonding interface is characterized by Transmission Electron Microscopy (TEM) revealing a 2-3 nm thick amorphous interlayer. The performance of the 1 cm 2 tandem cells, designed for low concentration applications, was studied by External Quantum Efficiency (EQE) and J-V measurements showing a power conversion efficiency of 17% under one-sun AM1.5G spectrum. To our knowledge, this is the highest efficiency ever reported for a wafer-bonded 2J III-V on Si solar cell. Limitations to performance have been identified and therefore higher efficiencies are expected.
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https://hal.univ-grenoble-alpes.fr/hal-02042351
Contributeur : Anne Kaminski-Cachopo <>
Soumis le : mercredi 20 février 2019 - 12:40:11
Dernière modification le : lundi 24 août 2020 - 09:50:02

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Elias Veinberg-Vidal, Laura Vauche, Clément Weick, Jeremy da Fonseca, Christophe Jany, et al.. Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells. 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), Jun 2017, Washington, United States. pp.2562-2565, ⟨10.1109/PVSC.2017.8366116⟩. ⟨hal-02042351⟩

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