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Communication dans un congrès

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

Abstract : Percolating networks of silicon nanowires, also called nanonets, have been proposed as a possible material for the channel of Field-Effect Transistors. Experimental results have shown that the dependence of current-voltage characteristics with parameters such as device dimension and nanowire density might be influenced by the statistical dispersion of individual nanowires threshold voltage. In order to further analyse this effect, this paper provides a finite element simulation of such nanonet-based field-effect transistor. We studied the influence on transistor characteristics of above-mentioned parameters. Simulation results were compared with experimental ones using the same parameter extraction methodology as in experiments.
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Communication dans un congrès
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https://hal.univ-grenoble-alpes.fr/hal-02016613
Contributeur : Mireille Mouis <>
Soumis le : mardi 12 février 2019 - 17:45:53
Dernière modification le : jeudi 6 août 2020 - 03:38:07

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T. Cazimajou, M. Mouis, G. Ghibaudo. Finite element simulation of 2D percolating silicon-nanonet field-effect transistor. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.165-168, ⟨10.1109/ULIS.2018.8354760⟩. ⟨hal-02016613⟩

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