Accéder directement au contenu Accéder directement à la navigation
Communication dans un congrès

Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond

Abstract : Stress engineering is a powerful tool to enhance nanoscale device performances. In this study we developed a methodology of 14nm strained pMOS FDSOI device mechanical simulation in order to carefully evaluate different stress effects on device performances. Mechanical simulation results are presented for different process solutions, such as Gate-First (GF) and Gate-Last (GL) processes but also for variation of germanium contents in source/drain and channel regions.
Type de document :
Communication dans un congrès
Liste complète des métadonnées

https://hal.univ-grenoble-alpes.fr/hal-02016552
Contributeur : Mireille Mouis <>
Soumis le : mardi 12 février 2019 - 17:15:02
Dernière modification le : lundi 20 juillet 2020 - 09:12:08

Identifiants

Collections

Citation

A. Idrissi-El Oudrhiri, S. Martinie, J-C. Barbe, O. Rozeau, C. Le Royer, et al.. Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2015, Washington DC, United States. pp.206-209, ⟨10.1109/SISPAD.2015.7292295⟩. ⟨hal-02016552⟩

Partager

Métriques