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Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

Abstract : In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.
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Soumis le : lundi 4 février 2019 - 11:20:05
Dernière modification le : mardi 1 septembre 2020 - 15:24:05

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Alessandro Crippa, Romain Maurand, Leo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, et al.. Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits. Physical Review Letters, American Physical Society, 2018, 120 (13), pp.137702. ⟨10.1103/PhysRevLett.120.137702⟩. ⟨hal-02005672⟩



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