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Journal Articles Physical Review Letters Year : 2018

Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

Romain Maurand

Abstract

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

Dates and versions

hal-02005672 , version 1 (04-02-2019)

Identifiers

Cite

Alessandro Crippa, Romain Maurand, Leo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, et al.. Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits. Physical Review Letters, 2018, 120 (13), pp.137702. ⟨10.1103/PhysRevLett.120.137702⟩. ⟨hal-02005672⟩
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