300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology - Université Grenoble Alpes
Article Dans Une Revue Japanese Journal of Applied Physics Année : 2016

300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology

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hal-01991862 , version 1 (24-01-2019)

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Julie Widiez, Sébastien Sollier, Thierry Baron, Mickaël Martin, Gweltaz Gaudin, et al.. 300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology. Japanese Journal of Applied Physics, 2016, 55 (4S), pp.04EB10. ⟨10.7567/JJAP.55.04EB10⟩. ⟨hal-01991862⟩
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