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Article dans une revue

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Abstract : Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm) have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-step growth process. By adjusting the growth temperature and the thickness of the nucleation layer, antiphase boundary free GaSb layers as thin as 250 nm are obtained. The 12% lattice mismatch between GaSb and Si is accommodated by both the formation of threading dislocations and a periodic array of 90° misfit dislocations at the interface. A GaSb layer inserted between AlSb barriers has been grown on an optimized GaSb/(001)-Si buffer layer and exhibits room temperature photoluminescence.
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https://hal.univ-grenoble-alpes.fr/hal-01954336
Contributeur : Marielle Clot <>
Soumis le : jeudi 13 décembre 2018 - 15:47:20
Dernière modification le : jeudi 6 août 2020 - 03:38:06

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T. Cerba, M. Martin, J. Moeyaert, S. David, J. Rouvière, et al.. Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition. Thin Solid Films, Elsevier, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩. ⟨hal-01954336⟩

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