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Article dans une revue

Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

Abstract : We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications.
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https://hal.univ-grenoble-alpes.fr/hal-01948065
Contributeur : Marielle Clot <>
Soumis le : vendredi 7 décembre 2018 - 13:31:40
Dernière modification le : samedi 1 août 2020 - 03:03:28

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Edgar A.A. León Pérez, Pierre-Vincent Guenery, Oumaïma Abouzaid, Khaled Ayadi, Solene Brottet, et al.. Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line. Solid-State Electronics, Elsevier, 2018, 143, pp.20-26. ⟨10.1016/j.sse.2017.11.011⟩. ⟨hal-01948065⟩

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