Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2018

Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

Résumé

The effect of probe-induced nanoindentation on the electrical transport in Ψ-MOSFET is presented. Systematic measurements were performed in order to evaluate the dependence of the drain current on the probe pressure in different operating regimes. This enabled to investigate the existence of the metallic Si-II crystallographic form of silicon, which emerges at high pressures and shows a significant impact in the accumulation regime.
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Dates et versions

hal-01948053 , version 1 (07-12-2018)

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Citer

Licinius Benea, Tiphaine Cerba, Maryline Bawedin, Cécile Delacour, Sorin Cristoloveanu, et al.. Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.141-144, ⟨10.1109/ULIS.2018.8354754⟩. ⟨hal-01948053⟩
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