Accéder directement au contenu Accéder directement à la navigation
Communication dans un congrès

Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

Abstract : The effect of probe-induced nanoindentation on the electrical transport in Ψ-MOSFET is presented. Systematic measurements were performed in order to evaluate the dependence of the drain current on the probe pressure in different operating regimes. This enabled to investigate the existence of the metallic Si-II crystallographic form of silicon, which emerges at high pressures and shows a significant impact in the accumulation regime.
Type de document :
Communication dans un congrès
Liste complète des métadonnées

https://hal.univ-grenoble-alpes.fr/hal-01948053
Contributeur : Marielle Clot <>
Soumis le : vendredi 7 décembre 2018 - 13:25:31
Dernière modification le : mardi 11 août 2020 - 12:56:02

Identifiants

Collections

Citation

Licinius Benea, Tiphaine Cerba, Maryline Bawedin, Cécile Delacour, Sorin Cristoloveanu, et al.. Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.141-144, ⟨10.1109/ULIS.2018.8354754⟩. ⟨hal-01948053⟩

Partager

Métriques

Consultations de la notice

304