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First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection

Abstract : Materials Research Express Paper First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection Thi Thu Thuy Nguyen1, Maxime Legallais1,2, Fanny Morisot1,2, Thibauld Cazimajou2, Valérie Stambouli1 , Mireille Mouis2, Bassem Salem3 and Céline Ternon1,3 Published 3 October 2018 • © 2018 IOP Publishing Ltd Materials Research Express, Volume 6, Number 1 Download Article PDF Figures References Download PDF 76 Total downloads Turn on MathJax Get permission to re-use this article Share this article Share this content via email Share on Facebook Share on Twitter Share on Google+ Share on CiteULike Share on Mendeley Article information Abstract Si nanonets (SiNN, networks of randomly oriented Si nanowires) and multi-parallel silicon nanowires (MP-SiNW) were integrated into field effect transistor using standard and low cost microelectronic technologies. The SiNN field effect transistors exhibit high initial ON-state current (in the range of 10–7 A), ION/IOFF ratio up to 104 and rather homogeneous transfer characteristics. In contrast, the MP-SiNW ones present smaller modulation between ON and OFF currents, higher IOFF and more scattered electrical characteristics. In view of DNA hybridization detection, a simple and eco-friendly functionalization process with glycidyloxypropyltrimethoxysilane (GOPS) was used to covalently graft single strand DNA probes on both SiNN and MP-SiNW devices. Validated by fluorescence measurement, DNA hybridization leads to a systematic decrease of ON-state current of SiNN devices. In addition, SiNN-based sensors exhibit more homogeneous and reproducible current variation in response to DNA hybridization step as compared to MP-SiNW configuration. This result highlights the better sensing performances of SiNN FETs as compared to MP-SiNW ones and emphasizes the SiNN potential for label-free detection of DNA.
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https://hal.univ-grenoble-alpes.fr/hal-01947795
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Soumis le : vendredi 7 décembre 2018 - 11:11:09
Dernière modification le : jeudi 17 septembre 2020 - 14:36:03

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Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Valérie Stambouli, et al.. First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection. Materials Research Express, IOP Publishing Ltd, 2019, 6 (1), pp.016301. ⟨10.1088/2053-1591/aae0d5⟩. ⟨hal-01947795⟩

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