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Communication Dans Un Congrès Année : 2018

Improvement of Sidewall Roughness of Sub-Micron SOI Waveguides by Hydrogen Plasma and Annealing

Résumé

We report the successful fabrication of low-loss submicrometric silicon-on-insulator strip waveguides for on-chip links. Postlithography treatment and postetching hydrogen annealing have been used to smoothen the waveguide sidewalls, as roughness is the major source of transmission losses. An extremely low silicon line-edge roughness of 0.75 nm is obtained with the optimized process flow. As a result, record-low optical losses of less than 0.5 dB/cm are measured at 1310 nm for strip waveguide dimensions exceeding 500 nm. They range from 1.2 to 0.8 dB/cm for 300-400-nm-wide waveguides. Those results are to our knowledge the best ever published for a 1310-nm wavelength. These results are compared to modeling based on Payne and Lacey equations.
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Dates et versions

hal-01942772 , version 1 (17-03-2023)

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Paternité

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Cyril Bellegarde, Erwine Pargon, Corrado Sciancalepore, Camille Petit-Etienne, Vincent Hugues, et al.. Improvement of Sidewall Roughness of Sub-Micron SOI Waveguides by Hydrogen Plasma and Annealing. IEEE International Photonics Conference (IPC 2018), Sep 2018, Rexton, United States. pp.591-594, ⟨10.1109/LPT.2018.2791631⟩. ⟨hal-01942772⟩
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