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Blister formation mechanism during high dose implanted photoresist stripping

Abstract : Dry strip processes performed after implantation steps have to remove efficiently the photoresist mask protecting the non-implanted area without leaving any defects on the substrate. In this study bubble-like defects called blisters are observed on implanted areas after several N2H2 dry strip processes. Analyses have been performed to study the blistering phenomenon. The formation of these defects is due to hydrogen diffusion and accumulation in the amorphized silicon layer formed by the implantation step. The effects of implantation parameters (dopant species, dose and energy) on blister formation have been demonstrated. The experimental results have been compared to simulations (using SRIM software) highlighting the main influence of amorphization rate against amorphized layer thickness. Optimization of the stripping process and integration modification are then proposed to delay the appearance of the blisters.
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https://hal.univ-grenoble-alpes.fr/hal-01942730
Contributeur : Marielle Clot <>
Soumis le : lundi 3 décembre 2018 - 14:06:32
Dernière modification le : mardi 6 octobre 2020 - 16:30:05

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Marion Croisy, Erwine Pargon, Cécile Jenny, Claire Richard, Denis Guiheux, et al.. Blister formation mechanism during high dose implanted photoresist stripping. Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩. ⟨hal-01942730⟩

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