In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window margin (WM), and retention. For this purpose, several RRAMs are characterized using various resistive layers and bottom electrodes. By focusing on one technology and optimizing programming conditions (current, voltage, and time), we establish a tradeoff between endurance and WM. Then, by changing memory stack, we demonstrate the correlation between endurance plus window marging improvement and retention degradation. Studying this last feature from a material point of view, we analyze different oxides by density functional theory. We realize a systematic review for possible exchanges of species between resistive layer and Cu-based top electrode and study their diffusion. This provides insights on conductive filament composition in different stacks. Combining previous experiments and simulations, we propose a link between memory characteristics and material microscopic parameters, through the ion energy migration barrier. Finally, we extract how endurance, WM, and retention are correlated to material properties and electrical parameters in order to choose the suitable material for a defined application using the RRAM technology.