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Communication dans un congrès

Electrical characterization of percolating silicon nanonet FETs for sensing applications

Abstract : We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in transistor mode, with back-gate biasing. These devices featured P-type field-effect characteristics suitable for future use as sensors. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as effective low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels.
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https://hal.univ-grenoble-alpes.fr/hal-01929333
Contributeur : Marielle Clot <>
Soumis le : mercredi 21 novembre 2018 - 10:27:56
Dernière modification le : jeudi 6 août 2020 - 03:38:08

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T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, et al.. Electrical characterization of percolating silicon nanonet FETs for sensing applications. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.23-26, ⟨10.1109/ULIS.2017.7962591⟩. ⟨hal-01929333⟩

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