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Communication dans un congrès

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

Abstract : In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 10 10 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features. We then propose an analytical model to calculate the dependence between endurance, window margin and retention, linking material parameters to memory characteristics.
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Communication dans un congrès
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https://hal.univ-grenoble-alpes.fr/hal-01882789
Contributeur : Marielle Clot <>
Soumis le : jeudi 27 septembre 2018 - 14:03:16
Dernière modification le : jeudi 6 août 2020 - 03:38:06

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C. Nail, G. Molas, P. Blaise, G. Piccolboni, B. Sklenard, et al.. Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations. 2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.4.5.1-4.5.4, ⟨10.1109/IEDM.2016.7838346⟩. ⟨hal-01882789⟩

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