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Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

Abstract : We demonstrate the fabrication and electrical characterization of -gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor–liquid–solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n+Si0.7Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245 nA at VDS = −0.5 V and VGS = −3 V with a subthreshold swing around 135 mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane’s Band-to-Band Tunneling model.
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https://hal.univ-grenoble-alpes.fr/hal-01882006
Contributeur : Marielle Clot <>
Soumis le : mercredi 26 septembre 2018 - 15:01:41
Dernière modification le : jeudi 6 août 2020 - 03:38:05

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V. Brouzet, B. Salem, P. Periwal, R. Alcotte, F. Chouchane, et al.. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism. Solid-State Electronics, Elsevier, 2016, 118, pp.26 - 29. ⟨10.1016/j.sse.2016.01.005⟩. ⟨hal-01882006⟩

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