How to produce high aspect ratio GaN and AlN nanopillar arrays with m-oriented facets by combining dry and wet processes for the fabrication of next generation deep ultraviolet light-emitting diodes ? - Université Grenoble Alpes
Communication Dans Un Congrès Année : 2024

How to produce high aspect ratio GaN and AlN nanopillar arrays with m-oriented facets by combining dry and wet processes for the fabrication of next generation deep ultraviolet light-emitting diodes ?

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Physique [physics]

Marielle Clot  : Connectez-vous pour contacter le contributeur

https://hal.univ-grenoble-alpes.fr/hal-04750024

Soumis le : mercredi 23 octobre 2024-13:08:43

Dernière modification le : mercredi 18 décembre 2024-09:28:42

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hal-04750024 , version 1 (23-10-2024)

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  • HAL Id : hal-04750024 , version 1

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L Jaloustre, L Valera, S Sales de Mello, S Labau, C Petit-Etienne, et al.. How to produce high aspect ratio GaN and AlN nanopillar arrays with m-oriented facets by combining dry and wet processes for the fabrication of next generation deep ultraviolet light-emitting diodes ?. Plasma Etch and Strip in Microelectronics (PESM), 14th International Workshop, Jun 2024, Leuven, Belgium. ⟨hal-04750024⟩

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