THz generation by beating of self-running Er-based ion-exchanged DFB lasers co-integrated on one single chip - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

THz generation by beating of self-running Er-based ion-exchanged DFB lasers co-integrated on one single chip

Résumé

Terahertz applications have been extensively studied during the last decade since they allow not only increasing the bandwidth of telecom systems but also the detection of many organic molecules in solid and liquid phase, including hazardous materials such as explosives. In this contribution, we present a device that allows generating frequencies in the Terahertz domain through the heterodyning of signals emitted by two distributed feedback lasers made by ion exchange on a erbium-ytterbium co-doped glass. Thanks to the intrinsic thermal stability of the glass substrate, the slow dynamic of the amplifier medium and since the laser pairs are integrated on a single chip and identically pumped by the same sources, stable frequencies have been generated in the millimeter and sub-Terahertz frequency range, without any thermal or electrical control loop being implemented.

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Dates et versions

hal-04207778 , version 1 (14-09-2023)

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Léo Hétier, Julien Poëtte, Lionel Bastard, Pierre-Baptiste Vigneron, Jean-Emmanuel Broquin. THz generation by beating of self-running Er-based ion-exchanged DFB lasers co-integrated on one single chip. Integrated Optics: Devices, Materials, and Technologies XXVII, SPIE, Jan 2023, San Francisco, United States. pp.24, ⟨10.1117/12.2650510⟩. ⟨hal-04207778⟩
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