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Communication Dans Un Congrès Année : 2022

Insight into the switching mechanisms of La2NiO4+δ analogue-type memristive devices suitable for artificial synapse applications

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hal-03780511 , version 1 (19-09-2022)

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  • HAL Id : hal-03780511 , version 1

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T-K. Khuu, G. Lefèvre, C. Jiménez, F. Wilhelm, S. Blonkowski, et al.. Insight into the switching mechanisms of La2NiO4+δ analogue-type memristive devices suitable for artificial synapse applications. SSI 23 - The 23rd International Conference on Solid State Ionics, Jul 2022, Boston, United States. ⟨hal-03780511⟩
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