Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO 2 - Université Grenoble Alpes
Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2021

Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO 2

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Physique [physics]

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https://hal.univ-grenoble-alpes.fr/hal-03449120

Soumis le : jeudi 25 novembre 2021-15:09:28

Dernière modification le : mardi 28 mai 2024-10:45:05

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hal-03449120 , version 1 (25-11-2021)

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Citer

Samia Belahcen, Christophe Vallée, Ahmad Bsiesy, Ahmad Chaker, Moustapha Jaffal, et al.. Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO 2. Journal of Vacuum Science & Technology A, 2021, 39 (1), pp.012410. ⟨10.1116/6.0000655⟩. ⟨hal-03449120⟩

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