Impacts of different carrier wafers during Cl2 Inductively Coupled Plasma etching on the GaN surface and the Al2O3/GaN interface - Université Grenoble Alpes Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Impacts of different carrier wafers during Cl2 Inductively Coupled Plasma etching on the GaN surface and the Al2O3/GaN interface

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hal-03448947 , version 1 (25-11-2021)

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  • HAL Id : hal-03448947 , version 1

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Thibaut Meyer, Sarah Boubenia, Bassem Salem, Camille Petit-Etienne, Erwine Pargon. Impacts of different carrier wafers during Cl2 Inductively Coupled Plasma etching on the GaN surface and the Al2O3/GaN interface. Micro and Nano Engineering Conference, Sep 2021, Turin, Italy. ⟨hal-03448947⟩
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