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Comparative study of two atomic layer etching processes for GaN

Abstract : Atomic layer etching (ALE) of Ga-polar GaN (0001) using a standard inductively coupled plasma-reactive ion etching system is achieved in this work. The sequential process is using Cl2 to modify the surface in the adsorption step. For the activation step, the authors compare two rare gas plasmas, namely, Ar and Kr, and show a much larger and well-defined ALE window for the latter. The ALE of GaN is demonstrated by etching mesa structures masked with a photoresist. A constant etching rate per cycle of two monolayers is obtained. The experimental conditions of this self-limited process are found by changing both the adsorption and activation times, together with the source power. This provides an atomic-scale process for nanofabrication, with significant improvements to the GaN surface.
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Contributeur : Marielle Clot <>
Soumis le : mercredi 22 septembre 2021 - 10:26:00
Dernière modification le : mercredi 22 septembre 2021 - 10:30:42


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Cédric Mannequin, Christophe Vallée, Katsuhiro Akimoto, Thierry Chevolleau, Christophe Durand, et al.. Comparative study of two atomic layer etching processes for GaN. Journal of Vacuum Science and Technology A, American Vacuum Society, 2020, 38 (3), pp.032602. ⟨10.1116/1.5134130⟩. ⟨hal-02917577⟩



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