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Article Dans Une Revue Nanotechnology Année : 2020

Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires

Résumé

It is well-known that the chemical potential which drives the vapor-liquid-solid growth of semiconductor nanowires is strongly affected by the liquid phase composition. Here, we investigate theoretically how the droplet composition influences the nucleation of Au-catalyzed GeSn nanowires on Ge(111) and Si(111) substrates. We compare the chemical potentials in an Au-Ge-Sn catalyst droplet before and after adding Ga and/or Si atoms. It is found that the presence of these atoms enhances the nucleation rate of nanowires on both substrates. Theoretical results are compared to experimental data on GeSn nanowires grown in a hot-wall reduced pressure chemical vapor deposition reactor. It is shown that the intentional addition of Ga in the de-wetting step improves the uniformity of the nanowire dimensions and yields higher density of nanowires over Ge(111) substrates. The nanowire growth on Si(111) substrate occurs only when Ga and/or Si are added to Au droplets. These results show that controlling the composition of the catalyst droplet is crucial for improving the quality of GeSn nanowires.
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Dates et versions

hal-02917562 , version 1 (18-10-2021)

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Hadi Hijazi, Mohammed Zeghouane, Franck Bassani, Pascal Gentile, Bassem Salem, et al.. Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires. Nanotechnology, 2020, 31 (40), pp.405602. ⟨10.1088/1361-6528/ab99f6⟩. ⟨hal-02917562⟩
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