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Communication Dans Un Congrès Année : 2002

Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001)

Résumé

We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low P As = 2 10 -6 torr leading to a 2D/3D growth mode transition measured by WEED at 1.8 ML, photoluminescence spectra with a FWHMs as low as 68meV at 300K have been obtained for a 4ML InSa deposit. Photoluminescence measurements as a function of the excitation power show that the multi-component PL spectra can be understood in terms of fundamental and excited levels of InAs islands. The fundamental peak (FWHM equal to 22meV at 8K) reveals a very low island size dispersion. Plane-view TEM and AFM images show that InAs islands are quantum << sticks >> aligned along [1-10], with flat top surfaces. Cross-section TEM imaging shows a very weak height dispersion attributed to the ability of the InAs/InP(00l) system to allow island height variation by monolayer fluctuation.
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Dates et versions

hal-02353255 , version 1 (16-02-2024)

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Christelle Monat, Michel Gendry, Julien Brault, M.P. Besland, Philippe Regreny, et al.. Low size dispersion of InAs quantum islands emitting at 1.55μm on InP (001). Conference Proceedings, 2002, Paris, France. pp.565-568, ⟨10.1109/ICIPRM.2002.1014491⟩. ⟨hal-02353255⟩
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