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Communication Dans Un Congrès Année : 2019

Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor

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hal-02332962 , version 1 (25-10-2019)

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  • HAL Id : hal-02332962 , version 1

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T. Haffner, F. Bassani, P. Gentile, N. Pauc, E. Martinez, et al.. Growth and electrical properties of in-situ doped GeSn nanowires for low power tunnel Field Effect Transistor. 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019, Nagoya, Japan. ⟨hal-02332962⟩
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